The effect of strain on the resistivity of indium tin oxide films prepared by pulsed laser deposition
Identifieur interne : 00E234 ( Main/Repository ); précédent : 00E233; suivant : 00E235The effect of strain on the resistivity of indium tin oxide films prepared by pulsed laser deposition
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Abstract
The piezoresistivity of thin films of indium tin oxide prepared by pulsed laser deposition has been measured as a function of processing parameters. The thickness of the films ranged from 200 to 1200 nm. Resistivity and strain sensitivity measurements as a function of laser deposition parameters are reported. Gauge factors, defined as the ratio of the fractional resistance change to the applied strain, were observed to vary from approximately 0.2 for deposition in vacuum to as large as -14.7 for deposition with a residual atmosphere of 50 mTorr of oxygen. The response of gauges to strains up to the measurement limit of approximately 220 μ was both linear and free of hysteresis. This fabrication strategy makes possible the direct deposition of sub-mm strain gauges onto surfaces and components, including those of micro electromechanical systems. © 2002 American Institute of Physics.
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The thickness of the films ranged from 200 to 1200 nm. Resistivity and strain sensitivity measurements as a function of laser deposition parameters are reported. Gauge factors, defined as the ratio of the fractional resistance change to the applied strain, were observed to vary from approximately 0.2 for deposition in vacuum to as large as -14.7 for deposition with a residual atmosphere of 50 mTorr of oxygen. The response of gauges to strains up to the measurement limit of approximately 220 μ was both linear and free of hysteresis. This fabrication strategy makes possible the direct deposition of sub-mm strain gauges onto surfaces and components, including those of micro electromechanical systems. © 2002 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>91</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The effect of strain on the resistivity of indium tin oxide films prepared by pulsed laser deposition</s1></fA08><fA11 i1="01" i2="1"><s1>FANG (Hui)</s1></fA11><fA11 i1="02" i2="1"><s1>MILLER (Timothy M.)</s1></fA11><fA11 i1="03" i2="1"><s1>MAGRUDER (Robert H.)</s1></fA11><fA11 i1="04" i2="1"><s1>WELLER (Robert A.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Mechanical Engineering, Vanderbilt University, Tennessee 37235</s1></fA14><fA14 i1="03"><s1>Department of Physics, Belmont University, Nashville, Tennessee 37212</s1><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235</s1><sZ>3 aut.</sZ></fA14><fA14 i1="05"><s1>Department of Electrical Engineering and Computer Science and Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235</s1></fA14><fA20><s1>6194-6196</s1></fA20><fA21><s1>2002-05-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0210757</s0></fA47><fA60><s1>P</s1><s3>CR</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The piezoresistivity of thin films of indium tin oxide prepared by pulsed laser deposition has been measured as a function of processing parameters. The thickness of the films ranged from 200 to 1200 nm. Resistivity and strain sensitivity measurements as a function of laser deposition parameters are reported. Gauge factors, defined as the ratio of the fractional resistance change to the applied strain, were observed to vary from approximately 0.2 for deposition in vacuum to as large as -14.7 for deposition with a residual atmosphere of 50 mTorr of oxygen. The response of gauges to strains up to the measurement limit of approximately 220 μ was both linear and free of hysteresis. 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